OPTICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS DOPED WITH FLUORINATED GASES

被引：1
|
作者：
MENDEZ, JM [1 ]
MUHL, S [1 ]
PICKIN, WF [1 ]
ORTIZ, A [1 ]
LICEA, J [1 ]
MONROY, R [1 ]
机构：
[1] NATL AUTONOMOUS UNIV MEXICO,INST INVEST MAT,MEXICO CITY 04510,DF,MEXICO
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 180卷 / 2-3期
关键词：
D O I：
10.1016/0022-3093(94)00482-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Doped amorphous silicon films were prepared by plasma-enhanced chemical vapour deposition of silane and hydrogen mixtures, using phosphorus pentafluoride (PF5) and boron trifluoride (BF3) as dopant precursors. The films were studied by UV-vis spectroscopy and their photo and dark conductivity were measured, the latter as a function of temperature. The optical gap of the n-type samples, doped with PF5, diminished as the concentration of this gas in the plasma was increased. However, the optical gap of p-type samples, doped with BF3, did not show any appreciable optical gap decrease as the concentration of BF3 was varied from 0.04% to 4.7%. The dark conductivity of the p-type films at these extremes of the doping range were 7.6 X 10(-10) and 3.5 X 10(-1) Ohm(-1) cm(-1), respectively.
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页码：230 / 235
页数：6
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