GROWTH OF GAAS, INAS, AND GAAS/INAS SUPERLATTICE STRUCTURES AT LOW SUBSTRATE-TEMPERATURE BY MOVPE

被引：17
|
作者：
OHNO, H
OHTSUKA, S
OHUCHI, A
MATSUBARA, T
HASEGAWA, H
机构：
[1] Hokkaido Univ, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期
关键词：
The X-ray diffraction patterns were taken at the High Brilliance X-ray Laboratory of Hokkaido University. This work was supported by a Grant-in-Aid for Special Project Research (#61114003) and partly by a Grant-in-Aid for Specially Promoted Research (#60965002); both from the Ministry of Education; Science and Culture;
D O I：
10.1016/0022-0248(88)90550-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
14
引用
收藏
页码：342 / 346
页数：5
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