共 50 条
- [1] BASIC PROPERTIES OF PLASMA-DEPOSITED mu c-Si. Japan Annual Reviews in Electronics, Computers & Telecommunications, 1983, 6 : 161 - 172
- [3] Basic study on Si-HBT using plasma-deposited μc-Si for heteroemitter Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1990, 73 (03): : 59 - 66
- [4] EFFECTS OF GROWTH-RATE ON THE MICROCRYSTALLINE CHARACTERISTICS OF PLASMA-DEPOSITED MU-C-SI-H SOLAR ENERGY MATERIALS, 1984, 11 (1-2): : 85 - 95
- [5] MICROCRYSTALLINE SILICON (MU-C-SI) PREPARED BY PLASMA-CHEMICAL TECHNIQUES JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1984, 16 : 80 - 97
- [6] BARRIER-LIMITED TRANSPORT IN MU-C-SI AND MU-C-SI,C THIN-FILMS PREPARED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 2025 - 2031
- [7] OPTICAL AND PHOTOELECTRICAL PROPERTIES OF MU-C-SI LAYERS AND THE INFLUENCE OF SUBSEQUENT HYDROGENATION PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 145 (02): : 401 - 406
- [10] DEPOSITION OF MU-C-SI AND MU-C-SI-C THIN-FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION SOLAR CELLS, 1991, 30 (1-4): : 419 - 434