HOT LO-PHONON QUASI-STEADY STATE DISTRIBUTION FUNCTION IN POLAR SEMICONDUCTORS

被引:7
|
作者
KRAL, K
HEJDA, B
KHAS, Z
机构
[1] Institute of Physics, Czechoslovak Academy of Sciences
来源
关键词
D O I
10.1002/pssb.2221570219
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The quasi‐steady state hot LO‐phonon distribution function, as it is produced by hot electron cooling in laser excitation experiments, is calculated induding the effect of electron energy collision broadening (EECB) and screeing. Numerical computations performed in several compound polar semiconductors reveal a rather strong effect of EECB. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
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页码:667 / 676
页数:10
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