APPLICATION OF X-RAY INTERFERENCE METHOD FOR RESIDUAL STRAIN-MEASUREMENT IN LOW-ENERGY AR ION-BOMBARDED SI (001)

被引：2
|
作者：
TSAI, CJ [1 ]
VREELAND, T [1 ]
ATWATER, HA [1 ]
机构：
[1] CALTECH,THOMAS J WATSON LAB APPL PHYS,PASADENA,CA 91125
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期
关键词：
D O I：
10.1063/1.111945
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have employed the x-ray interference method for measurement of the residual strains in Si (001) surfaces bombarded by low energy Ar+. This method, combined with transmission electron microscopy, permits determination of the average residual strain in very thin bombarded layers. The residual strain in the bombarded layers was found to monotonically increase as the density of pointlike defects increases and saturates upon the formation of extended defects. Annealing data also suggest that defects formed by low energy ion bombardment at moderate temperature (approximate to 450 degrees C) require high temperature (>800 degrees C) annealing for their removal.
引用
收藏
页码：434 / 436
页数：3
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