SURFACE-TREATMENT OF SI BY ANNEALING AND EFFECT ON MOTT-SCHOTTKY PLOTS

被引：1
|
作者：
ZEYER, C
GRUNIGER, HR
机构：
[1] Dep artment of Industrial and Engineering Chemistry, Swiss Federal Institute of Technology
来源：
ELECTROCHIMICA ACTA | 1992年 / 37卷 / 15期
关键词：
P-SILICON; CAPACITANCE MEASUREMENTS; FLAT-BAND; ANNEALING; ACETONITRILE;
D O I：
10.1016/0013-4686(92)85208-3
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Annealing has a healing effect on the surface of p-Si. This leads to a shift of the flatband potential of up to 2 V. This effect was studied by capacitance measuremenets (Mott-Schottky plots) on p-Si samples in acetonitrile in a wide range of acceptor concentrations from N(A) = 1 E+21 up to N(A) = 1 E+25.
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页码：2791 / 2793
页数：3
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