DOMAIN INVERSION IN LINBO3 USING DIRECT ELECTRON-BEAM WRITING

被引：95
|
作者：
NUTT, ACG
GOPALAN, V
GUPTA, MC
机构：
[1] Research Laboratories, Eastman Kodak Company, Rochester
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期
关键词：
D O I：
10.1063/1.106837
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A 3-mu-m periodic domain-inverted pattern on the C- face of LiNbO3 has been written using direct electron-beam writing for first-order gratings used in second harmonic generation. The domain formation mechanism has been investigated, especially the shape of the domain and need for a conductor on the C+ face during the electron-beam writing process.
引用
收藏
页码：2828 / 2830
页数：3
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