PASSIVATION OF DEFECTS IN POLYCRYSTALLINE SILICON SOLAR-CELLS BY MOLECULAR-HYDROGEN ANNEALING

被引：4
|
作者：
AGARWAL, A
BANA, D
SINGAL, CM
机构：
[1] Univ of Roorkee, Dep of Physics,, Roorkee, India, Univ of Roorkee, Dep of Physics, Roorkee, India
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1985年 / 58卷 / 05期
关键词：
HYDROGEN - Heat Treatment - MOLECULAR CRYSTALS - SEMICONDUCTING SILICON - Defects;
D O I：
10.1080/00207218508939068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a new technique for passivating grain boundaries and intragrain defects in the polycrystalline silicon material of the solar cells. Enhancement in the minority-carrier diffusion length has been achieved by thermal annealing in molecular hydrogen in previously formed n** plus minus p junctions. The annealing temperature dependence of the diffusion length has been studied in the temperature range of 400 to 700 degree C. The study shows a significant increase in the diffusion length from 21. 8 mu m to 67. 8 mu m by this process. The diffusion length increases with annealing in molecular hydrogen and shows a peak value at 600 degree C.
引用
收藏
页码：769 / 774
页数：6
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