ANALYSIS OF SILICON OXYNITRIDE LAYERS BY COMPLEMENTARY USE OF ELASTIC BACKSCATTERING AND NUCLEAR-REACTIONS

被引：5
|
作者：
BARCZ, A
TUROS, A
WIELUNSKI, L
SKRZYNECKA, I
机构：
[1] INST NUCL RES,NUCL REACTIONS DEPT,WARSAW,POLAND
[2] INST ELECTR TECHNOL,WARSAW,POLAND
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 28卷 / 01期
关键词：
D O I：
10.1002/pssa.2210280134
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：293 / 301
页数：9
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