A MODEL FOR THE HALOGEN-BASED PLASMA-ETCHING OF SILICON

被引：54
|
作者：
PELLETIER, J
机构：
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1987年 / 20卷 / 07期
关键词：
D O I：
10.1088/0022-3727/20/7/007
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：858 / 869
页数：12
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