SPONTANEOUS EMISSION IN PLANAR SEMICONDUCTOR MICROCAVITIES DISPLAYING VACUUM RABI SPLITTING

被引:25
|
作者
ABRAM, I
OUDAR, JL
机构
[1] France Telecom/CNET, Centre Paris B, Laboratoire de Bagneux, 92220 Bagneux
来源
PHYSICAL REVIEW A | 1995年 / 51卷 / 05期
关键词
D O I
10.1103/PhysRevA.51.4116
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We calculate the spontaneous-emission characteristics of a quantum-well exciton embedded in the center of a planar microcavity and compare them with the emission characteristics in a single-mode cavity with lateral confinement of the electromagnetic field. The results indicate that because the modal structure of a planar microcavity consists of a spectrally dense continuum, the exciton decays into the cavity continuum with a time constant close to the free-space spontaneous-emission lifetime, even under conditions in which its spectrum displays the vacuum Rabi splitting. This behavior contrasts with the case of cavities with lateral in-plane confinement of the field, in which the vacuum Rabi splitting is the signature of a dramatic modification of the spontaneous-emission lifetime. The technological implications of this difference are discussed. © 1995 The American Physical Society.
引用
收藏
页码:4116 / 4122
页数:7
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