InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

被引：0

作者：

SANG Xien ^{[1
]}

XU Yuan ^{[1
]}

YIN Mengshuang ^{[1
]}

WANG Fang ^{[1
,2
,3
,4
]}

LIOU Juin J ^{[5
]}

LIU Yuhuai ^{[1
,2
,3
,4
]}

机构：

[1] National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University

[2] Institute of Intelligence Sensing, Zhengzhou University

[3] Research Institute of Industrial Technology Co., Ltd., Zhengzhou University

[4] Zhengzhou Way Do Electronics Co., Ltd.

[5] School of Electrical and Information Engineering, North Minzu University

来源：

OptoelectronicsLetters | 2024年 / 20卷 / 02期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TN312.8 [];

学科分类号：

0803 ;

摘要：

To improve the internal quantum efficiency(IQE) and light output power of In Ga N light-emitting diodes(LEDs), we proposed an In-composition gradient increase and decrease In Ga N quantum barrier structure. Through analysis of its P-I graph, carrier concentration, and energy band diagram, the results showed that when the current was 100 m A, the In-composition gradient decrease quantum barrier(QB) structure could effectively suppress electron leakage while improving hole injection efficiency, resulting in an increase in carrier concentration in the active region and an improvement in the effective recombination rate in the quantum well(QW). As a result, the IQE and output power of the LED were effectively improved.

引用

页码：89 / 93

页数：5

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