Low-noise and low-power pixel sensor chip for gas pixel detectors

被引:0
|
作者
Zhuo Zhou
Shi-Qiang Zhou
Dong Wang
Xiang-Ming Sun
Chao-Song Gao
Peng-Zhen Zhu
Wei-Ping Ren
Jun Liu
Mu-Xian Li
Chen Lian
Chun-Lai Dong
机构
[1] PLAC
[2] Central China Normal University
[3] Key Laboratory of Quark and Lepton Physics (MOE)
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
O572.212 []; TP212 [发送器(变换器)、传感器];
学科分类号
070202 ; 080202 ;
摘要
Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021. The pixel array of Topmetal-M2 consists of pixels of 400 rows × 512 columns with a pixel pitch of 45 μm × 45 μm. The array is divided into 16 subarrays, with pixels of 400 rows × 32 columns per subarray. Each pixel incorporates two charge sensors: a diode sensor and a Topmetal sensor. The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements, a discriminator with a peak-holding circuit, and a time-to-amplitude converter for time-of-arrival measurements. The pixel of Topmetal-M2 has a charge input range of0-3 k e-, a voltage output range of0-180 mV, and a charge-voltage conversion gain of59.56 μV∕e-. The average equivalent noise charge of Topmetal-M2, which includes the readout electronic system noise, is43.45 e-. In the scanning mode, the time resolution of Topmetal-M2 is 1 LSB = 1.25 μs, and the precision is ~ 7.41 μs. At an operating voltage of 1.5 V, Topmetal-M2 has a power consumption of49 mW∕cm2. In this article, we provide a comprehensive overview of the chip architecture, pixel working principles, and functional behavior of Topmetal-M2. Furthermore, we present the results of preliminary tests conducted on Topmetal-M2, namely, alpha-particle and soft X-ray tests.
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页码:144 / 154
页数:11
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