Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers

被引：0
|
作者：
B. Arar
H. Wenzel
R. Güther
O. Brox
A. Maaßdorf
A. Wicht
G. Erbert
M. Weyers
G. Tränkle
H. N. J. Fernando
A. Peters
机构：
[1] Ferdinand-Braun-Institut,
[2] Leibniz-Institut für Höchstfrequenztechnik,undefined
[3] Leibniz-Institut für Astrophysik Potsdam,undefined
[4] Humboldt-Universität zu Berlin,undefined
来源：
Applied Physics B | 2014年 / 116卷
关键词：
Ridge Waveguide; Refractive Index Profile; Reverse Bias Voltage; Ridge Width; Waveguide Core;
D O I：
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中图分类号：
学科分类号：
摘要：
Results of a GaAs/AlGaAs-based phase modulator designed for an operating wavelength of 780 nm are presented for the first time. The modulator is based on a P-p-i-n-N double heterostructure and features a waveguide with a vertical W-shaped index profile optimized for low propagation losses and a ridge waveguide for lateral index-guiding. A phase modulation efficiency of 12°/V mm is reported. The propagation losses are determined to about 1.4 dB/cm.
引用
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页码：175 / 181
页数：6
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