Preparation of a strip structure for quantum-cascade lasers

被引：0
|
作者：
V. V. Mamutin
N. D. Il’inskaya
B. V. Pushnyi
R. N. Levin
Yu. M. Shernyakov
机构：
[1] Russian Academy of Sciences,Ioffe Physical
来源：
Technical Physics Letters | 2013年 / 39卷
关键词：
Silicon Nitride; Metal Organic Chemical Vapor Deposition; Quantum Cascade Laser; Indium Phosphide; Strip Structure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method for overgrowing laser stripe structures with high-ohmic indium phosphide to bound the domain of current flow and to improve heat dissipation is presented. Overgrowing was performed using metal-organic chemical-vapor deposition. It is shown that the method makes it possible to obtain high-quality epitaxial layers and defectless overgrowth boundaries without special processing of the structures after photolithography. All the InP layers were n-conductive, the specific resistance was ρ ∼ 5 × 104 Ω cm, and the carrier concentration was n ∼ 5 × 1010 cm−3. The characteristics of the grown InP layers permit one to obtain high-quality quantum-cascade lasers.
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页码：811 / 813
页数：2
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