Calculation of stress intensity factors using three-dimensional molecular dynamics simulation

被引:0
|
作者
Deok-Kee Choi
Jih-Woon Kim
机构
[1] Dankook University 8 Hannam-dong,Department of Mechanical Engineering
来源
Metals and Materials | 1998年 / 4卷
关键词
stress indensity factors; molecular dynamic simulation; embedded atomic model (EAM);
D O I
暂无
中图分类号
学科分类号
摘要
Molecular dynamics simulation is emerging with recent advent of high-performance computers. This paper addresses an application of molecular dynamics simulation to calculation of stress intensity factors (SIF) of a material using a three-dimensional molecular model. Since the popular molecular models such as Lennard-Jones model fails to compute behaviors of materials correctly, in this paper the embedded atomic model (EAM) was utilized. A copper plate with a single edge crack is considered to calculate SIFs in opening mode. More than ten thousand of molecules were used for the simulation and due to a large amount of computation, a super computer CRAY C90 was employed. The results show good agreement with the theoretical SIF values.
引用
收藏
页码:920 / 924
页数:4
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