Anomalous Edge Emission from Zinc Selenide Heavily Doped with Oxygen

被引：0

|

作者：

N. K. Morozova

I. N. Miroshnikova

机构：

[1] National Research University “Moscow Power Engineering Institute”,

[2] Institute of Nanotechnologies of Microelectronics,undefined

[3] Russian Academy of Sciences,undefined

来源：

Semiconductors | 2020年 / 54卷

关键词：

self-activated; stoichiometric; point defects; isoelectronic centers; complexes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

页码：102 / 107

页数：5

相关论文

共 50 条

[1] Anomalous Edge Emission from Zinc Selenide Heavily Doped with Oxygen
Morozova, N. K.
Miroshnikova, I. N.
SEMICONDUCTORS, 2020, 54 (01) : 102 - 107
[2] EDGE EMISSION IN ZINC SELENIDE
GEZCI, S
WOODS, J
JOURNAL OF LUMINESCENCE, 1975, 10 (04) : 267 - 272
[3] EDGE EMISSION IN ZINC SELENIDE SINGLE CRYSTALS
REYNOLDS, DC
LARSON, OW
PEDROTTI, LS
JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2250 - &
[4] PAIR SPECTRA AND EDGE EMISSION IN ZINC SELENIDE
DEAN, PJ
MERZ, JL
PHYSICAL REVIEW, 1969, 178 (03): : 1310 - &
[5] INTERIMPURITY RADIATIVE RECOMBINATION IN HEAVILY DOPED COMPENSATED ZINC SELENIDE
IVANOVA, GN
MATVEEVA, TL
NEDEOGLO, DD
NOVIKOV, BV
TALALAEV, VG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 237 - 238
[6] Edge luminescence from zinc selenide doped with isovalent magnesium impurity
Sletov, MM
TECHNICAL PHYSICS LETTERS, 2001, 27 (01) : 63 - 64
[7] Edge luminescence from zinc selenide doped with isovalent magnesium impurity
M. M. Sletov
Technical Physics Letters, 2001, 27 : 63 - 64
[8] STRUCTURED PAIR SPECTRA IN EDGE EMISSION OF ZINC SELENIDE
DEAN, PJ
MERZ, JL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (01): : 26 - &
[9] OPTICAL-PROPERTIES OF ZINC SELENIDE DOPED WITH OXYGEN
KULAKOV, MP
NEGRII, VD
INORGANIC MATERIALS, 1990, 26 (11) : 1954 - 1958
[10] Compensating defects in heavily nitrogen-doped zinc selenide: A photoluminescence study
Moldovan, M
Setzler, SD
Myers, TH
Halliburton, LE
Giles, NC
APPLIED PHYSICS LETTERS, 1997, 70 (13) : 1724 - 1726

← 1 2 3 4 5 →