Effect of interfacial disordered spins on the magnetism of Co/Si multilayers

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作者
Ranjan Roy
Dushyant Singh
M. Senthil Kumar
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[1] Indian Institute of Technology Bombay,Department of Physics
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The influence of the Si spacer layer on the structural and magnetic properties of Co/Si multilayers is studied. The role of disordered surface spins at the interface of the multilayers is also studied. This study is performed by characterizing a series of samples [Co(50 Å)/Si(tSiÅ)]20 prepared by DC magnetron sputtering. Structural and microstructural studies suggest that the crystallite size is increased with decrease in the Si layer thickness. The magnetization increases and tends to the bulk value of Co while decreasing the thickness of the Si layers. Effect of interfacial disordered spins changes the shape of the hysteresis loop observed in the low field regime. The disordered surface spins lead to the rise of a crossed magnetic hysteresis loop of the multilayers.
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