Influence of native defects on polytypism in SiC

被引：0
|
作者：
A. A. Lebedev
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1999年 / 33卷
关键词：
Silicon; Experimental Data; Carbide; Magnetic Material; Silicon Carbide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An analysis of experimental data on the influence of native defects of the crystalline lattice on polytypism in silicon carbide has been performed. A simple analytical expression, which links the degree of hexagonality of the polytype with the concentration of carbon and silicon vacancies, was obtained. The possible dependence of the model parameters on the experimental conditions is investigated.
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页码：707 / 709
页数：2
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