On the charge-transport mechanisms in Cr-n-InP and Mo-n-InP diode structures

被引：0
|
作者：
S. V. Slobodchikov
Kh. M. Salikhov
B. E. Samorukov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2003年 / 37卷
关键词：
Charge Carrier; Magnetic Material; Electromagnetism; Electrical Characteristic; Diode Structure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electrical characteristics of Cr-n-InP and Mo-n-InP diode structures were investigated, and the charge-transport mechanism was estimated. It was established that this is either a thermionic or generation-recombination current that dominates in the Cr-n-InP structures, depending on temperature. In Mo-n-InP structures, the double injection of charge carriers dominates in the drift transport.
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页码：936 / 939
页数：3
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