Resistance characteristics of CdZnTe films with structure of Cu/CdZnTe/ITO and Cu/CdZnTe/Cu

According to the bipolar resistive switching characteristics of CdZnTe films, fabricated devices with sandwiched structure of Cu/CdZnTe/ITO and Cu/CdZnTe/Cu were made in this study. The different resistance switching behaviors were then observed for the Cu/CdZnTe/ITO and Cu/CdZnTe/Cu structures. The fitting of the I–V curve was used to analyze the conduction mechanism. For a high resistance state, space charge-limited current conduction and Schottky emission were used to analyze the conduction mechanism of the Cu/CdZnTe/Cu structure, and Ohmic-like behavior was held in the Cu/CdZnTe/ITO structure. In a low resistance state, the conductions of the ITO/CdZnTe/Cu and Cu/CdZnTe/Cu structure was ascribed to the polarization of the CdZnTe film in the low resistance state. The above results were interpreted according to the different quality of films deposited on the Cu and ITO bottom electrodes.