Spin-dependent tunneling in nanostructures consisting of magnetic barriers

被引：0
|
作者：
Maowang Lu
Lide Zhang
Yunxia Jin
Xiaohong Yan
机构：
[1] Institute of Solid State Physics,
[2] Chinese Academy of Sciences,undefined
[3] PO Box 1129,undefined
[4] Hefei 230031,undefined
[5] PR China,undefined
[6] Department of Physics,undefined
[7] Xiangtan University,undefined
[8] Xiangtan,undefined
[9] Hunan 411105,undefined
[10] PR China,undefined
来源：
The European Physical Journal B - Condensed Matter and Complex Systems | 2002年 / 27卷
关键词：
PACS. 73.40.Gk Tunneling – 72.10.-d Theory of electronic transport; scattering mechanisms – 73.23.-b Electronic transport in mesoscopic systems – 75.70.Cn Interfacial magnetic properties (multilayers, superlattices);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We study the spin-dependent transport properties of the nanostructures consisting of realistic magnetic barriers produced by the deposition of ferromagnetic stripes on heterostructures. It is shown that, only in the nanostructures with symmetric magnetic field with respect to the magnetic-modulation direction, electrons exhibit a considerable spin-polarization. It is also shown that the degree of the electron spin polarization is greatly dependent on the ferromagnetic stripe and its position relative to the 2DEG. A much larger electron-spin polarization can be obtained by properly fabricating the ferromagnetic stripe and by adjusting its distance above the 2DEG.
引用
收藏
页码：565 / 570
页数：5
相关论文
共 50 条
  • [1] Spin-dependent tunneling in nanostructures consisting of magnetic barriers
    Lu, MW
    Zhang, LD
    Jin, YX
    Yan, XH
    EUROPEAN PHYSICAL JOURNAL B, 2002, 27 (04): : 565 - 570
  • [2] Spin-dependent tunneling effects on magnetic nanostructures
    Getzlaff, M
    Bode, M
    Kubetzka, A
    Pietzsch, O
    Wiesendanger, R
    CHINESE PHYSICS, 2001, 10 : S186 - S194
  • [3] Theory of spin-dependent tunneling and transport in magnetic nanostructures
    Maekawa, S
    Inoue, J
    Itoh, H
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 4730 - 4732
  • [4] Spin-dependent resonant tunneling in semiconductor nanostructures
    Silva, EAD
    La Rocca, GC
    BRAZILIAN JOURNAL OF PHYSICS, 1999, 29 (04) : 719 - 722
  • [5] Spin-dependent transport in magnetic nanostructures
    Maekawa, S.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 : E1459 - E1463
  • [6] Spin-dependent transport in magnetic nanostructures
    Maekawa, S
    Inoue, J
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1996, 156 (1-3) : 315 - 316
  • [7] Spin-dependent tunneling junctions with AlN and AlON barriers
    Sharma, M
    Nickel, JH
    Anthony, TC
    Wang, SX
    APPLIED PHYSICS LETTERS, 2000, 77 (14) : 2219 - 2221
  • [8] The magnetic stability of spin-dependent tunneling devices
    Gider, S
    Runge, BU
    Marley, AC
    Parkin, SSP
    SCIENCE, 1998, 281 (5378) : 797 - 799
  • [9] Spin-dependent tunneling recombination in heterostructures with a magnetic layer
    K. S. Denisov
    I. V. Rozhansky
    N. S. Averkiev
    E. Lähderanta
    Semiconductors, 2017, 51 : 43 - 48
  • [10] Spin-dependent tunneling in granular magnetic tunnel junctions
    Unite Mixte de Physique, CNRS/Thomson-LCR, Orsay, France
    J Magn Magn Mater, 1-2 (33):
12345