Switching by topological insulators

被引：0
|
作者：
Chi-Feng Pai
机构：
[1] National Taiwan University,Department of Materials Science and Engineering and the Center of Atomic Initiative for New Materials (AI
来源：
Nature Materials | 2018年 / 17卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Magnetization in magnetoresistive memory devices can be controlled at room temperature by spin–orbit torques originating from the surface states of topological insulators.
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页码：755 / 757
页数：2
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