Correction to: Investigations of the photoelectrochemical properties of different contents In of InxGa1-xN in CO2 reduction

被引：0
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作者：
Guifeng Chen
Huan Li
Hui Zhang
Jintian Liu
Luxiao Xie
Xinjian Xie
Guodong Liu
机构：
[1] Hebei University of Technology,School of Materials Science and Engineering
[2] Hebei Engineering Laboratory of Photoelectronic Functional Crystals,Key Laboratory of Nanodevices and Applications
[3] Hebei University of Technology,undefined
[4] Suzhou Institute of Nano-Tech and NanoBionics,undefined
[5] Chinese Academy of Sciences,undefined
来源：
Research on Chemical Intermediates | 2022年 / 48卷
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摘要：
In Fig. 5(b), The In0.009GaN0.0991/GaN should be changed to In0.071 GaN0.0929/GaN. The author apologizes for this error.
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页码：1305 / 1306
页数：1
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