Junctionless Silicon Nanotube TFET for Improved DC and Radio Frequency Performance

In this work, a junctionless silicon nanotube TFET (JL-SiNT-TFET) is reported for low standby power and high-frequency applications. The workfunction of the core gate (CG) metal is considered similar to the outer gate electrode. The length of the CG is extended up to the source region and connected to the gate supply voltage. The inclusion of the CG offers better electrostatic controllability and enables a steep turn on capability. While maintaining low IOFF and targeting the optimum performance of the device, the JL-SiNT-TFET shows 19.8 mV/dec subthreshold swing (SS), ultra-low OFF-state leakage current, higher drive current as compared to the junctionless silicon nanowire TFET (JL-SiNW-TFET). However, temperature and substrate doping effect on device performance, core gate position optimization, the impact of channel length variation on SS, ION/IOFF ratio, and RF parameters are also investigated for choosing the most favorable values.