Electronic and structural transitions in Pb1−xGexTe:Ga alloys under pressure

被引：0
|
作者：
E. P. Skipetrov
E. A. Zvereva
O. S. Volkova
A. V. Golubev
A. Yu. Mollaev
R. K. Arslanov
V. E. Slyn’ko
机构：
[1] Moscow State University,Faculty of Physics
[2] Moscow State University,Faculty of Materials Science
[3] Russian Academy of Sciences,Institute of Physics, Dagestan Scientific Center
[4] National Academy of Sciences of Ukraine,Institute of Materials Sciences (Chernovtsy Branch)
来源：
Semiconductors | 2004年 / 38卷
关键词：
Phase Transition; Activation Energy; Electrical Property; Charge Carrier; Conduction Band;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of pressure on electrical properties of Ga-doped n-Pb1−xGexTe alloys (x=0.06, 0.08) is studied. The pressure dependence of the activation energy of a deep Ga impurity center is obtained. It is shown that the position of the Ga level with respect to the bottom of the conduction band is virtually unchanged under pressure. Anomalies are found in the temperature and pressure dependences of the resistivity; these anomalies are apparently associated with structural phase transitions from the cubic to the rhombohedral and orthorhombic phases, respectively. The results obtained are used to construct a diagram of the modification of the energy spectrum of charge carriers in the cubic phase of the alloys investigated under pressure.
引用
收藏
页码：1164 / 1167
页数：3
相关论文
共 50 条
  • [1] Electronic and structural transitions in Pb1-xGexTe:Ga alloys under pressure
    Skipetrov, EP
    Zvereva, EA
    Volkova, OS
    Golubev, AV
    Mollaev, AY
    Arslanov, RK
    Slyn'ko, VE
    SEMICONDUCTORS, 2004, 38 (10) : 1164 - 1167
  • [2] Magnetic properties of Pb1−xGexTe alloys doped with ytterbium
    E. P. Skipetrov
    N. A. Chernova
    L. A. Skipetrova
    A. V. Golubev
    E. I. Slyn’ko
    Semiconductors, 2001, 35 : 1249 - 1251
  • [3] Electronic structure and structural phase transition in Pb1-xGexTe:Cr under pressure
    Skipetrov, E. P.
    Pichugin, N. A.
    Skipetrova, L. A.
    Slyn'ko, E. I.
    Slyn'ko, V. E.
    INTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, JOINT AIRAPT-22 AND HPCJ-50, 2010, 215
  • [4] Gallium-induced deep level in Pb1−xGexTe alloys
    E. P. Skipetrov
    E. A. Zvereva
    V. V. Belousov
    L. A. Skipetrova
    E. I. Slyn’ko
    Semiconductors, 2000, 34 : 894 - 896
  • [5] Structural, Electronic and Thermoelectric Properties of Pb1−xSnxTe Alloys
    Abhiyan Pandit
    Raad Haleoot
    Bothina Hamad
    Journal of Electronic Materials, 2020, 49 : 586 - 592
  • [6] SEMICONDUCTOR-METAL-SEMICONDUCTOR TRANSITIONS IN Pb1 - xSnxTe:In ALLOYS UNDER PRESSURE.
    Akimov, B.A.
    Zlomanov, V.P.
    Ryabova, L.I.
    Chudinov, S.M.
    Yatsenko, O.B.
    Soviet physics. Semiconductors, 1979, 13 (07): : 759 - 763
  • [7] Chromium impurity states in Pb1-xGexTe alloys under pressure
    Skipetrov, Evgeny
    Plastun, Alexey
    Kovalev, Boris
    Skipetrova, Lyudmila
    Topchevskaya, Tatyana
    Slyn'ko, Vasily
    MATERIALS RESEARCH AT HIGH PRESSURE, 2007, 987 : 87 - +
  • [8] Resonant gallium level in Pb1−xSnxTe alloys under pressure
    E. P. Skipetrov
    A. V. Golubev
    V. E. Slyn’ko
    Semiconductors, 2007, 41 : 145 - 149
  • [9] Metal-insulator transition in chromium-doped Pb1−xGexTe alloys
    E. P. Skipetrov
    F. A. Pakpur
    N. A. Pichugin
    V. E. Slyn’ko
    Semiconductors, 2007, 41 : 1035 - 1040
  • [10] STRUCTURAL PHASE-TRANSITIONS IN PB1-XSNXSE ALLOYS UNDER PRESSURE
    BRANDT, NB
    PONOMAREV, YG
    SKIPETROV, EP
    TITEL, V
    SHTANOV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 403 - 405
12345