Effect of oxygen pressure on electrical properties of Ge-doped ZnO thin films grown by using pulsed laser deposition

被引：0
|
作者：
D. J. Kim
M. H. Lee
J. S. Park
D. Do
W. Lee
M. H. Kim
T. K. Song
H. I. Choi
K. W. Jang
W. J. Kim
机构：
[1] Changwon National University,School of Nano and Advanced Materials Engineering
[2] Changwon National University,Department of Physics
来源：
Journal of the Korean Physical Society | 2012年 / 61卷
关键词：
ZnO; Ge doping; Thin films; Pulsed laser deposition;
D O I：
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中图分类号：
学科分类号：
摘要：
ZnO and Ge-doped ZnO (GZO) thin films were fabricated on c-Al2O3 substrates at various oxygen pressures (10, 50, 100, 200, and 400 mTorr) and at 300 °C by using a pulsed laser deposition method. The transmittances of the films were measured by using ultraviolet-visible spectroscopy. The absorption of the band gap edge was calculated by using Tauc’s equation. The films showed n-type conduction characteristics. Compared to the other films, the film deposited at 10 mTorr compared showed improved electrical properties. The carrier concentration and the resistivity of the GZO film were 1021 cm−3 and 6.5 × 10−4 Ωcm, respectively.
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页码：920 / 923
页数：3
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