Bottom-Gate Geometry Increases Materials Options in All-Polymer Integrated Circuits

被引：0
|
作者：
Tim Palucka
机构：
来源：
MRS Bulletin | 2000年 / 25卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：7 / 8
页数：1
相关论文
共 50 条
  • [1] Bottom-gate geometry increases materials options in all-polymer integrated circuits
    Palucka, T
    [J]. MRS BULLETIN, 2000, 25 (10) : 7 - 8
  • [2] Low-cost all-polymer integrated circuits
    Drury, CJ
    Mutsaers, CMJ
    Hart, CM
    Matters, M
    de Leeuw, DM
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (01) : 108 - 110
  • [3] High-performance all-polymer integrated circuits
    Gelinck, GH
    Geuns, TCT
    de Leeuw, DM
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (10) : 1487 - 1489
  • [4] Organic field-effect transistors and all-polymer integrated circuits
    Matters, M.
    De Leeuw, D.M.
    Vissenberg, M.J.C.M.
    Hart, C.M.
    Herwig, P.T.
    Geuns, T.
    Mutsaers, C.M.J.
    Drury, C.J.
    [J]. Optical Materials, 1999, 12 (02): : 189 - 197
  • [5] Organic field-effect transistors and all-polymer integrated circuits
    Matters, M
    de Leeuw, DM
    Vissenberg, MJCM
    Hart, CM
    Herwig, PT
    Geuns, T
    Mutsaers, CMJ
    Drury, CJ
    [J]. OPTICAL MATERIALS, 1999, 12 (2-3) : 189 - 197
  • [6] Impact of ambient moisture on gate controllability in ferroelectric-gate field-effect transistors with bottom-gate geometry
    Koh, Sang-Gyu
    Miyasako, Takaaki
    Hosokura, Tadasu
    Tokumitsu, Eisuke
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (08)
  • [7] All-polymer monolithic resonant integrated optical gyroscope
    Xue, Xiao-Mei
    Tang, Jie
    Zhou, Huan-Li
    Qin, Yan-Yan
    Song, Yuanjun
    Li, Ruo-Zhou
    Zhang, Xiao-Yang
    Zhang, Tong
    [J]. OPTICS EXPRESS, 2022, 30 (23) : 42728 - 42737
  • [8] Fluorescence excitation on monolithically integrated all-polymer chips
    Schelb, Mauno
    Vannahme, Christoph
    Welle, Alexander
    Lenhert, Steven
    Ross, Benjamin
    Mappes, Timo
    [J]. JOURNAL OF BIOMEDICAL OPTICS, 2010, 15 (04)
  • [9] Stability of top- and bottom-gate amorphous polymer field-effect transistors
    Georgakopoulos, S.
    Sparrowe, D.
    Meyer, F.
    Shkunov, M.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (24)
  • [10] Top-gate and bottom-gate amorphous ZnO transparent TFTs fabricated by all-etching processes
    Hsieh, Hsing-Hung
    Wu, Chung-Chih
    [J]. 2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II, 2007, 38 : 192 - +
12345