Studies of ZrO2 electrolyte thin-film thickness on the all-solid thin-film electrochromic devices

被引：0
|
作者：
K. J. Patel
M. S. Desai
C. J. Panchal
机构：
[1] BITS Education campus,Science and Humanities Department
[2] The M.S. University of Baroda,Applied Physics Department, Faculty of Technology and Engineering
来源：
Journal of Solid State Electrochemistry | 2015年 / 19卷
关键词：
Electrochromic devices; All-solid thin film; Transmittance modulation; Solid electrolyte; Zirconium oxide; Open-circuit memory; Physical vapor depositions;
D O I：
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学科分类号：
摘要：
The electrochromic behavior of an all-solid thin-film electrochromic device consisting of layers ITO/NiO/ZrO2/WO3/ITO using the physical vapor deposition method has been studied as a function of the thickness of ZrO2 electrolyte. The ZrO2 thin-film thickness is varied from 2,000–5,000 Å. The transmittance modulation and memory effect improved with increase in the thickness of ZrO2 electrolyte. The device having 5,000 Å ZrO2 thickness shows good transmittance modulation (56 %) in the wavelength range of 450–1,000 nm with open-circuit memory effect of 170 min.
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页码：275 / 279
页数：4
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