Anticrossing of Landau levels in HgTe/CdHgTe (013) quantum wells with an inverted band structure

被引：0
|
作者：
M. S. Zholudev
F. Teppe
S. V. Morozov
M. Orlita
C. Consejo
S. Ruffenach
W. Knap
V. I. Gavrilenko
S. A. Dvoretskii
N. N. Mikhailov
机构：
[1] Russian Academy of Sciences,Institute for Physics of Macrostructures
[2] Lobachevsky State University of Nizhni Novgorod,Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, GIS
[3] Universite Montpellier II,TERALAB
[4] CNRS-UJF-UPS-INSA,Laboratoire National des Champs Magnetiques Intenses
[5] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
来源：
JETP Letters | 2015年 / 100卷
关键词：
Conduction Band; Valence Band; JETP Letter; Cyclotron Resonance; Landau Level;
D O I：
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中图分类号：
学科分类号：
摘要：
The simultaneous splitting of lines of an interband transition and cyclotron resonance in the conduction band has been detected in the absorption spectra of HgTe/CdHgTe quantum wells with an inverted band structure in quantizing magnetic fields. It has been shown that it is due to the absence of an inversion center in the crystal, which results in the interaction between the lower Landau level of the conduction band and the upper Landau level of the valence band.
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页码：790 / 794
页数：4
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