Thermoelectric properties of Mg2Si1−xSbx (0 ≤ x ≤ 0.025) synthesized by the high-temperature high-pressure method

In this work, the thermoelectric materials Mg2Si1−xSbx (0 ≤ x ≤ 0.025) were prepared by high-temperature high-pressure (HTHP) method, and the temperature dependence of the thermoelectric properties were investigated. Compared with other traditional methods, the processing time of the HTHP method was sharply reduced from a few days to <15 min. The samples are synthesized at 1073 K under a pressure of 2.5 GPa. With rising temperature, the electrical transport properties are strengthened, while the thermal conductivity (κ) evidently declines. The maximum thermoelectric figure of merit (ZT) of the Mg2Si0.99Sb0.01 reaches 0.55 at 773 K.