Study on the temperature dependence of the OH− absorption band in Hf-doped LiNbO3 crystals

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作者
Xunan Shen
Wenbo Yan
Jianli Jing
Lihong Shi
Fangfang Jia
Guohong Liang
Yingying Huang
Meng Wu
Yuwei Zhang
Haiyun Dong
Jiushuang Zhang
Guifeng Chen
Hongjian Chen
机构
[1] Hebei University of Technology,School of Materials Science & Engineering
[2] Tianjin Chengjian University,Department of Physics
[3] Tianjin Power Source Institute,undefined
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关键词
Doping Concentration; Doping Level; Defect Evolution; Dope Concentration Increase; LiNbO3 Crystal;
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摘要
We study in this paper the temperature dependence of the OH− absorption band in LiNbO3 crystals with different Hf-doping concentrations. It is found that the shoulder at 3500 cm−1 appears in the doping level of 2.6 mol%, becomes more evident at 3 and 4 mol%, and then gradually faints when the doping concentration increases. This result is explained by the non-monotonic change of Nb vacancy density in the three stages of the defect evolution involved in the Hf incorporation of LN lattice. Moreover, the absorption difference analysis of the OH− bands is consistent with this explanation and reveals that the mobility of H+ ions may be reduced by the strong trapping of the highly electronegative Nb vacancies.
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页码:3775 / 3779
页数:4
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