The mechanism of formation of interface barriers in ZnO:Mn ceramics

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作者
Valentyna Nosenko
Nadija Korsunska
Igor Vorona
Tetyana Stara
Volodymyr Bondarenko
Olexandr Melnichuk
Lyudmyla Melnichuk
Andriy Kryvko
Iryna Markevich
机构
[1] V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine,
[2] Mykola Gogol State University of Nizhyn,undefined
[3] Instituto Politécnico Nacional – ESIME Zacatenco,undefined
来源
SN Applied Sciences | 2020年 / 2卷
关键词
ZnO:Mn ceramics; Interface barriers; Oxygen adsorption;
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摘要
The role of oxygen adsorption in the formation of varistor characteristics in ZnO:Mn ceramics was investigated. The samples were made of the mixture of ZnO powder with MnSO4 aqueous solution, sintered in air for 3 h at 1100–1300 °C and furnace cooled. Mn content in the initial mixture was of 0.1 at.%. The density of prepared ceramics was of 5.37–5.41 g/cm3. XRD patterns indicated hexagonal wurtzite structure of obtained samples. The incorporation of manganese atoms in ZnO lattice as MnZn2+ centres was proven by EPR spectroscopy. Current–voltage (CV) characteristics of as-prepared samples and of the same ones kept in N2 flow, vacuum or oxygen atmosphere were compared. The increase of the sample conductivity and the decrease of CV characteristic nonlinearity after the exposure to nitrogen or vacuum were observed, whereas the action of oxygen resulted in the opposite effects. Obtained results testify that the adsorption of ambient oxygen contributes essentially to the formation of interface potential barriers in ZnO:Mn ceramics. The analysis of the available data has led to the conclusion that a thin layer of some Mn-related phase is formed at grain boundaries under sintering. This layer separates adjacent ZnO grains, which allows the diffusion of oxygen along grain boundaries and its adsorption on ZnO grain surface.
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