Edge absorption and circular photogalvanic effect in 2D topological insulator edges

被引：0
|
作者：
M. V. Entin
L. I. Magarill
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
来源：
JETP Letters | 2016年 / 103卷
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摘要：
The electron absorption on the edge states and the edge photocurrent of a 2D topological insulator (TI) are studied. We consider the optical transitions within linear edge branches of the energy spectrum. The interaction with impurities is taken into account. The circular polarization is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation.
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页码：711 / 716
页数：5
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