In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers

Carbon doping in AlxGa1−xAs was achieved using different approaches. The moderate growth temperature of 650°C was employed to grow C bulk-doped AlxGa1−xAs with a high Al mole fraction. The hole-density was altered using different V/III ratios. The trimethylaluminum (TMAl) was used as an effective C δ-doping precursor for growth of C δ-doped pipi doping superlattices in AlxGa1−xAs. the average hole-density of C δ-doped pipi superlattices was greater than 2−3 × 1019 cm−3. Zn-free GRINSCH In0.2Ga0.8As/GaAs laser structures were then grown using the C bulk-doped AlxGa1−xAs and C δ-doped pipi superlattice as a cladding and ohmic contact layer, respectively. The ridge waveguide laser diodes were fabricated and characterized to verify flexibility of these two doping approaches for device structures.