Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells

被引：0
|
作者：
Michio Tajima
Masatoshi Ikebe
Yoshio Ohshita
Atsushi Ogura
机构：
[1] Institute of Space and Astronautical Science/JAXA,
[2] Meiji University,undefined
[3] Toyota Technological Institute,undefined
来源：
Journal of Electronic Materials | 2010年 / 39卷
关键词：
Photoluminescence; multicrystalline silicon; dislocation cluster; iron contamination; oxygen precipitation; D-line;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We investigated the effect of Fe contamination on the electronic properties of dislocation clusters in relation to oxygen precipitation in multicrystalline silicon (mc-Si). Photoluminescence (PL) spectroscopy and mapping were performed at room and liquid-He temperatures on mc-Si wafers before and after Fe contamination. PL spectra consisted of the band-edge emission, the 0.78-eV emission associated with oxygen precipitates, and the dislocation-related D-lines. The Fe contamination increased the electrically active dislocation clusters. Part of these clusters acted as preferential oxygen precipitation sites, and their electronic properties were not further influenced by the Fe contamination.
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页码：747 / 750
页数：3
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