In the endeavor to make quantum computers a reality, integrated superconducting circuits have become a promising architecture. A major challenge of this approach is decoherence originating from spurious atomic tunneling defects at the interfaces of qubit electrodes, which may resonantly absorb energy from the qubit’s oscillating electric field and reduce the qubit’s energy relaxation time T1. Here, we show that qubit coherence can be improved by tuning dominating defects away from the qubit resonance using an applied DC-electric field. We demonstrate a method that optimizes the applied field bias and enhances the average qubit T1 time by 23%. We also discuss how local gate electrodes can be implemented in superconducting quantum processors to enable simultaneous in situ coherence optimization of individual qubits.
机构:
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Clarke, John
Wilhelm, Frank K.
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Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, CanadaUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA