Silicon optical modulators

被引:2
|
作者
G. T. Reed
G. Mashanovich
F. Y. Gardes
D. J. Thomson
机构
[1] Advanced Technology Institute,
[2] University of Surrey,undefined
来源
Nature Photonics | 2010年 / 4卷
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摘要
Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.
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页码:518 / 526
页数:8
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