Electrostrain Enhancement at Tricritical Point for BaTi1−xHfxO3 Ceramics

被引:0
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作者
Xinghao Hu
Shailendra Rajput
Sabyasachi Parida
Junning Li
Wenjia Wang
Luo Zhao
Jinghui Gao
Lisheng Zhong
Xiaobing Ren
机构
[1] Xi’an Jiaotong University,State Key Laboratory of Electrical Insulation and Power Equipment and Multi
[2] Jiangsu University,disciplinary Materials Research Center, Frontier Institute of Science and Technology
[3] Ariel University,Institute of Intelligent Flexible Mechatronics
[4] C.V. Raman College of Engineering,Department of Electric/Electronic Engineering
[5] National Institute for Materials Science,Department of Physics
关键词
electrostrain; lattice distortion; tricritical point; Raman spectroscopy;
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摘要
The maximum electromechanical property of piezoelectric ceramic is normally achieved at morphotropic phase boundary. Herein, we found that a maximum electrostrain is obtained in single rhombohedral phase region at the tricritical point (which is a single rhombohedral phase at room temperature) for BaTi1−xHfxO3 ceramics. The mechanism for electrostrain enhancement at tricritical point (TTP) was uncovered by analyzing its crystallographic feature. The results show that TTP (x = 0.11) exhibits largest electrostrain (S = 0.063%) at room temperature. And the TTP reveals a maximum crystallite size (66.3 nm) and minimum lattice strain (0.7 × 10−4). Further Raman results demonstrate a lowest Raman intensity occurs at TTP, which confirmed the specific crystallographic behavior. Therefore, a minimum lattice strain-induced low elastic energy could lower landau free energy, which is responsible for electrostrain enhancement at TTP. This work may provide a new insight for understanding and designing large electromechanical ceramics.
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页码:5388 / 5394
页数:6
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