Effect of Si(100)-c(4 × 12)-Al and Si(111)-(5.55 × 5.55)-Cu reconstructions on the deposition of cobalt onto silicon surface

The use of surface reconstructions for modifying properties of single crystal silicon substrates with a view to the creation of new nanostructures is a promising direction in the development of nanotechnologies. Systems Si(100)-c(4 × 12)-Al and Si(111)-(5.55 × 5.55)-Cu occupy special positions among stable reconstructions of the silicon surface, which have been recently demonstrated to be promising templates. The adsorption of cobalt on these surfaces at various temperatures has been studied using scanning tunneling microscopy. The room-temperature deposition leads to the formation of a weakly ordered layer of metallic Co with retained initial reconstructions at the Co/Si interface. An increase in the temperature leads to the formation of faceted cobalt silicide islands on both reconstructed surfaces.