Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic Ellipsometry

被引：0

作者：

C.M. Lennon

L.A. Almeida

R.N. Jacobs

J.K. Markunas

P.J. Smith

J. Arias

A.E. Brown

J. Pellegrino

机构：

[1] Corbin Company,Microphysics Laboratory, Department of Physics

[2] U.S. Army RDECOM,undefined

[3] CERDEC,undefined

[4] Night Vision and Electronic Sensors Directorate,undefined

[5] Rand Corporation,undefined

[6] University of Illinois at Chicago,undefined

来源：

Journal of Electronic Materials | 2012年 / 41卷

关键词：

CdTe; HgCdTe; GaAs; molecular beam epitaxy; infrared; spectroscopic ellipsometry;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We describe the growth of CdTe (211)B by molecular beam epitaxy on large-area epiready GaAs (211)B substrates. Prior to CdTe growth, GaAs substrates were thermally cleaned under an As4 flux. Oxide desorption was verified by in situ spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction. The use of in situ SE played a significant role in the study of CdTe-on-GaAs growth and annealing processes. An effective medium approximation (EMA) was used to model the overlayer thickness variation of CdTe epilayers throughout growth and in situ annealing cycles. A correlation between SE-derived EMA thickness values and surface defect formation mitigation is discussed. All annealed samples (11.5 μm to 13 μm thick) exhibited excellent crystalline quality with average double crystal rocking curve full-width at half-maximum (FWHM) values of ~60 arcsec.

引用

页码：2965 / 2970

页数：5

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