Effect of Post-annealing Processes on Filamentary-Based Resistive Switching Mechanism of Chromium Oxide Thin Films

被引：0
|
作者：
Ngoc Kim Pham
Kieu Hanh Thi Ta
Vinh Cao Tran
Van Hieu Le
Bao Thu Le Nguyen
Heong Kyu Ju
Tosawat Seetawan
Bach Thang Phan
机构：
[1] University of Science,Faculty of Materials Science
[2] Vietnam National University,Laboratory of Advanced Materials
[3] University of Science,Department of Mathematics and Physics
[4] Vietnam National University,Department of Nano
[5] University of Information Technology,Physics
[6] Vietnam National University,Center of Excellence on Alternative Energy, Research Development Institute, Program of Physics, Faculty of Science and Technology
[7] Gachon University,Center for Innovative Materials and Architectures (INOMAR)
[8] Sakon Nakhon Rajabhat University,undefined
[9] Vietnam National University,undefined
来源：
Journal of Electronic Materials | 2017年 / 46卷
关键词：
Microstructure films; resistive switching; annealing process; Ag filament; negative differential resistance effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The interrelation between microstructure of chromium oxide films (CrOx) and formation of silver (Ag) filament in Ag/CrOx/Pt devices has been investigated at various annealing temperatures. It is revealed that Cr2O3 phase is dominant at high annealing temperatures and different microstructures of the CrOx films exhibit different resistance switching characteristics. As-deposited CrOx films with amorphous structure show highly reliable and reproducible resistance switching due to an easy formation of thin Ag filaments. 300°C-annealed CrOx films with denser structure exhibit a fluctuating switching characteristics, relating to negative differential resistance (NDR) effect, in the first several tens of switching cycles, followed by a stable switching characteristics. On the contrary, the resistance switching is not observed in 500°C-annealed CrOx films due to presence of voids or pinholes created at high annealing temperature. The roles of NDR effect and voids/pinholes on resistance switching characteristics of CrOx thin films are also discussed.
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页码：3285 / 3294
页数：9
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