Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

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作者
Yongbo Yuan
Gaurav Giri
Alexander L. Ayzner
Arjan P. Zoombelt
Stefan C. B. Mannsfeld
Jihua Chen
Dennis Nordlund
Michael F. Toney
Jinsong Huang
Zhenan Bao
机构
[1] University of Nebraska-Lincoln,Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience
[2] Stanford University,Department of Chemical Engineering
[3] Stanford Synchrotron Radiation Lightsource,undefined
[4] SLAC National Accelerator Laboratory,undefined
[5] Center for Nanophase Materials Sciences,undefined
[6] Oak Ridge National Laboratory,undefined
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摘要
Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm2 Vs−1 (25 cm2 Vs−1 on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.
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