Remote p-type Doping in GaSb/InAs Core-shell Nanowires

被引：0
|
作者：
Feng Ning
Li-Ming Tang
Yong Zhang
Ke-Qiu Chen
机构：
[1] School of Physics and Electronics,Department of Applied Physics
[2] Hunan University,undefined
来源：
Scientific Reports | / 5卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mobility of nanowire. For Zn doping in bare ZB [110] GaSb/InAs core-shell nanowire the hole states are compensated by surface states. We also studied the behaviors of remote p-type doing in two-dimensional (2D) GaSb/InAs heterogeneous slabs and confirmed that the orientation of nanowire side facet is a key factor for achieving high efficient remote p-type doping.
引用
收藏
相关论文
共 50 条
  • [1] Remote p-type Doping in GaSb/InAs Core-shell Nanowires
    Ning, Feng
    Tang, Li-Ming
    Zhang, Yong
    Chen, Ke-Qiu
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [2] Band-offset effect on localization of carriers and p-type doping of InAs/GaAs core-shell nanowires
    Shu, Haibo
    Cao, Dan
    Liang, Pei
    Chen, Xiaoshuang
    Lu, Wei
    [J]. PHYSICS LETTERS A, 2013, 377 (21-22) : 1464 - 1468
  • [3] InAs/GaSb Core-Shell Nanowires: Growth and Characterization
    Lepsa, Mihail Ion
    Nagda, Gunjan
    Perla, Pujitha
    Demarina, Nataliya
    Gruetzmacher, Detlev
    [J]. 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [4] Electronic structure of InAs/GaSb core-shell nanowires
    Kishore, V. V. Ravi
    Partoens, B.
    Peeters, F. M.
    [J]. PHYSICAL REVIEW B, 2012, 86 (16):
  • [5] Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
    Luo, Ning
    Huang, Guang-Yao
    Liao, Gaohua
    Ye, Lin-Hui
    Xu, H. Q.
    [J]. SCIENTIFIC REPORTS, 2016, 6
  • [6] Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
    Ning Luo
    Guang-Yao Huang
    Gaohua Liao
    Lin-Hui Ye
    H. Q. Xu
    [J]. Scientific Reports, 6
  • [7] Manipulation of polarization anisotropy in bare InAs and InAs/GaSb core-shell nanowires
    Patra, Atanu
    Roy, Anushree
    Gomes, Umesh Prasad
    Zannier, Valentina
    Ercolani, Daniele
    Sorba, Lucia
    [J]. APPLIED PHYSICS LETTERS, 2018, 112 (15)
  • [8] Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements
    Gluschke, Jan G.
    Leijnse, Martin
    Ganjipour, Bahram
    Dick, Kimberly A.
    Linke, Heiner
    Thelander, Claes
    [J]. ACS NANO, 2015, 9 (07) : 7033 - 7040
  • [9] Engineering the Effective p-Type Dopant in GaAs/InAs Core-Shell Nanowires with Surface Dangling Bonds
    Song, Changsheng
    Wang, Jiqing
    Zhang, Zhixiang
    Mao, Huibing
    Zhao, Qiang
    Yang, Pingxiong
    Xing, Huaizhong
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (43): : 25209 - 25214
  • [10] The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires
    [J]. 1600, American Institute of Physics Inc. (116):
12345