Localisation-to-delocalisation transition of moire excitons in WSe2/MoSe2 heterostructures

被引:1
|
作者
Blundo, Elena [1 ]
Tuzi, Federico [1 ]
Cianci, Salvatore [1 ]
Cuccu, Marzia [1 ]
Olkowska-Pucko, Katarzyna [2 ]
Kipczak, Lucja [2 ]
Contestabile, Giorgio [1 ]
Miriametro, Antonio [1 ]
Felici, Marco [1 ]
Pettinari, Giorgio [3 ]
Taniguchi, Takashi [4 ]
Watanabe, Kenji [5 ]
Babinski, Adam [2 ]
Molas, Maciej R. [2 ]
Polimeni, Antonio [1 ]
机构
[1] Sapienza Univ Rome, Phys Dept, Piazzale Aldo Moro 5, I-00185 Rome, Italy
[2] Univ Warsaw, Inst Expt Phys, Fac Phys, Pasteura 5, PL-02093 Warsaw, Poland
[3] CNR, Inst Photon & Nanotechnol, I-00133 Rome, Italy
[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan
[5] Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba 3050044, Japan
关键词
INTERLAYER EXCITONS; PHYSICS; STATES;
D O I
10.1038/s41467-024-44739-9
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Moire excitons (MXs) are electron-hole pairs localised by the periodic (moire) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, e.g., for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of WSe2/MoSe2 HSs from T = 6 K to room temperature using time-resolved and continuous-wave micro-photoluminescence also under a magnetic field. The exciton dynamics and emission lineshape evolution with temperature show clear signatures that MXs de-trap from the moire potential and turn into free interlayer excitons (IXs) for temperatures above 100 K. The MX-to-IX transition is also apparent from the exciton magnetic moment reversing its sign when the moire potential is not capable of localising excitons at elevated temperatures. Concomitantly, the exciton formation and decay times reduce drastically. Thus, our findings establish the conditions for a truly confined nature of the exciton states in a moire superlattice with increasing temperature and photo-generated carrier density.
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页数:11
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