Microscopic simulation of semiconductor lasers at telecommunication wavelengths

被引：0
|
作者：
A. Thränhardt
C. Bückers
C. Schlichenmaier
I. Kuznetsova
S. W. Koch
J. Hader
J. V. Moloney
机构：
[1] Philipps-Universität Marburg,Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften
[2] The University of Arizona,Arizona Center for Mathematical Sciences
来源：
Optical and Quantum Electronics | 2006年 / 38卷
关键词：
carrier scattering; dilute nitrides; GaAsSb; microscopic gain calculation; quantum well lasers; telecommunication wavelength;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We consider two GaAs-based laser materials emitting at telecommunication wavelengths, namely the dilute nitride (GaIn)(NAs) as well as Ga(AsSb), and model their optical properties by including scattering and dephasing on a microscopic basis. The theory shows an excellent agreement with experiment without the inclusion of fit parameters such as phenomenological scattering times. By careful comparison of measurements and computations, one can extract controversial bandstructure parameters such as the band offset.
引用
收藏
页码：1005 / 1009
页数：4
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