Quantum-confined Stark effect and intraband transitions in a semiconductor spherical layer

被引：0
|
作者：
V. A. Arutyunyan
机构：
[1] State Engineering University of Armeniya,Gyumri Educational Center
来源：
Physics of the Solid State | 2003年 / 45卷
关键词：
Spectroscopy; State Physics; Absorption Coefficient; Field Strength; Charge Carrier;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of an external homogeneous electric field on the states of charge carriers in a size-quantized spherical layer is considered. An explicit dependence of the energy shift on the external field strength and the geometric sizes of the sample is obtained, and the electro-optical absorption coefficient for intraband dipole transitions is calculated.
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页码：1342 / 1346
页数：4
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