Gd;
(Mn;
Fe;
);
compounds;
Magnetic transition;
Magnetocaloric effect;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
The influences of Mn/Fe ratio on the structural, magnetic and magnetocaloric properties of Gd6(Mn1−xFex)23 (x = 0.0–0.5) compounds have been investigated by means of X-ray diffraction (XRD) and magnetic measurements. The XRD results show the compounds crystallize in the cubic Th6Mn23-type structure, and the lattice size decreases with the decrease in Mn/Fe ratio. Magnetic measurements show that the samples exhibit a second-order magnetic transition from TC = 99 K for x = 0.3 down to TC = 89 K for x = 0.4 and increase to 293 K for x = 0.5. The magnetization measured at 10 K decreases from 119 emu/g for x = 0.0 to 82 emu/g for x = 0.4, but the magnetization is 105 emu/g at x = 0.5. For an applied field from 0 to 5 T, the maximum values of magnetic entropy change (− ΔSM) for Gd6(Mn1−xFex)23 compounds with x = 0.3, 0.4 and 0.5 are 3.56 J/kg K, 3.77 J/kg K and 1.79 J/kg K, respectively. The properties of Gd6(Mn1−xFex)23 compounds help to understand the exceptional physical characteristics and provide the information for seeking giant magnetocaloric materials.
机构:
Nancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, FranceNancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, France
Lemoine, P.
Ban, V.
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Nancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, FranceNancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, France
Ban, V.
Verniere, A.
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Nancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, FranceNancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, France
Verniere, A.
Mazet, T.
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Nancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, FranceNancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, France
Mazet, T.
Malaman, B.
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Nancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, FranceNancy Univ, Inst Jean Lamour, Dept P2M, CNRS UMR 7198, F-54506 Vandoeuvre Les Nancy, France
机构:
Univ Rennes 1, UMR CNRS 6226, Inst Sci Chim Rennes, 263 Ave Gen Leclerc,CS 74205, F-35042 Rennes, France
Univ Lorraine, Fac Sci & Technol, UMR CNRS 7198, Inst Jean Lamour, BP 70239, F-54506 Vandoeuvre Les Nancy, FranceUniv Rennes 1, UMR CNRS 6226, Inst Sci Chim Rennes, 263 Ave Gen Leclerc,CS 74205, F-35042 Rennes, France
Lemoine, Pierric
Verniere, Anne
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机构:
Univ Lorraine, Fac Sci & Technol, UMR CNRS 7198, Inst Jean Lamour, BP 70239, F-54506 Vandoeuvre Les Nancy, FranceUniv Rennes 1, UMR CNRS 6226, Inst Sci Chim Rennes, 263 Ave Gen Leclerc,CS 74205, F-35042 Rennes, France
Verniere, Anne
Malaman, Bernard
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机构:
Univ Lorraine, Fac Sci & Technol, UMR CNRS 7198, Inst Jean Lamour, BP 70239, F-54506 Vandoeuvre Les Nancy, FranceUniv Rennes 1, UMR CNRS 6226, Inst Sci Chim Rennes, 263 Ave Gen Leclerc,CS 74205, F-35042 Rennes, France
Malaman, Bernard
Mazet, Thomas
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机构:
Univ Lorraine, Fac Sci & Technol, UMR CNRS 7198, Inst Jean Lamour, BP 70239, F-54506 Vandoeuvre Les Nancy, FranceUniv Rennes 1, UMR CNRS 6226, Inst Sci Chim Rennes, 263 Ave Gen Leclerc,CS 74205, F-35042 Rennes, France
机构:
Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, TaiwanNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Nguyen, T. Ly
Mazet, Th.
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Univ Lorraine, CNRS, Inst Jean Lamour, F-54000 Nancy, FranceNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Mazet, Th.
Malterre, D.
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Univ Lorraine, CNRS, Inst Jean Lamour, F-54000 Nancy, FranceNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Malterre, D.
Lin, H. J.
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Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, TaiwanNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Lin, H. J.
Yoshimura, M.
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Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, TaiwanNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Yoshimura, M.
Liao, Y. F.
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Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, TaiwanNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Liao, Y. F.
Ishii, H.
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Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, TaiwanNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Ishii, H.
Hiraoka, N.
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Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, TaiwanNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Hiraoka, N.
Tseng, Y. C.
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机构:
Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, TaiwanNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
Tseng, Y. C.
Chainani, A.
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机构:
Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, TaiwanNatl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
机构:
Hangzhou Dianzi Univ, Inst Mat Phys, Hangzhou 310018, Peoples R China
Toyama Univ, Grad Sch Sci & Engn, Toyama 9308555, JapanHangzhou Dianzi Univ, Inst Mat Phys, Hangzhou 310018, Peoples R China
Li, Lingwei
Nishimura, Yasuhiro
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机构:
Toyama Univ, Grad Sch Sci & Engn, Toyama 9308555, JapanHangzhou Dianzi Univ, Inst Mat Phys, Hangzhou 310018, Peoples R China
Nishimura, Yasuhiro
Huo, Dexuan
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机构:
Hangzhou Dianzi Univ, Inst Mat Phys, Hangzhou 310018, Peoples R ChinaHangzhou Dianzi Univ, Inst Mat Phys, Hangzhou 310018, Peoples R China
Huo, Dexuan
Qian, Zhenghong
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机构:
Hangzhou Dianzi Univ, Ctr Integrated Spintron Devices, Hangzhou 310018, Peoples R ChinaHangzhou Dianzi Univ, Inst Mat Phys, Hangzhou 310018, Peoples R China
Qian, Zhenghong
Nishimura, Katsuhiko
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机构:
Toyama Univ, Grad Sch Sci & Engn, Toyama 9308555, JapanHangzhou Dianzi Univ, Inst Mat Phys, Hangzhou 310018, Peoples R China