Synthesis of anodic silicon oxide films in water-organic solutions containing orthophosphoric acid

被引：0
|
作者：
I. L. Baranov
L. V. Tabulina
L. S. Stanovaya
T. G. Rusal’skaya
机构：
[1] Educational Institution “Belarussian State University of Informatics and Radioelectronics”,
来源：
Russian Journal of Electrochemistry | 2006年 / 42卷
关键词：
anodic treatment; silicon oxide; solid diffusate; diode region; nanoelectronics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Variations in electrophysical properties of anodic silicon oxide at the surface of semiconductor silicon are studied as a function of the composition of electrolytic solutions containing orthophosphoric acid and the conditions of reaching the final formation potential. The optimum conditions for the formation of anodic SiO2 coatings that include phosphorus-containing admixtures are determined, the coatings being intended for application as diffusates in nanoelectronics.
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页码：320 / 325
页数：5
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