Influence of impurity binding energy on the excitation dynamics of doped GaAs quantum dot: Role of noise

The study rigorously analyzes the time-average excitation rate (TAER) of impurity doped GaAsquantum dot as a function of the binding energy (BE) of the system and under the aegis of Gaussian white noise. The excitation of ground state population has been induced by different types of time-dependent perturbations viz. polychromatic radiation field (PRF), pulsed field (PF), chirped pulsed field (CPF), time-dependent impurity potential strength and time-dependent noise strength. Gaussian white noise connects with the system by additive and multiplicative modes. The study scrutinizes the outcome of concerted impact of some factors which eventually designs the features of the TAER plots. These factors include BE, ingression of Gaussian white noise in a typical mode and the nature of the time-dependent fluctuations. The TAER diagrams manifest regular growth, regular drop, maximization (important in view of production of large nonlinear optical properties, minimization and saturation (indicating dynamic freezing). The observations elucidate the usefulness of various types of time-dependent perturbations to harness the TAER among the doped GaAs quantum dot eigenstates when the BE of the system undergoes a gradual change.